A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT  

作　　者：郑佳欣 马晓华 卢阳 赵博超 张宏鹤 张濛 曹梦逸 郝跃 

机构地区：[1]School of Advanced Material and Nanotechnology,Xidian University [2]School of Microelectronics,Xidian University

出　　处：《Chinese Physics B》2015年第10期438-442,共5页中国物理B（英文版）

基　　金：Project supported by the National Key Basic Research Program of China(Grant No.2011CBA00606);Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0915);the National Natural Science Foundation of China(Grant No.61334002)

摘　　要：A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.

关 键 词：AIGaN/GaN HEMT high power-added efficiency amplifier microwave and millimeterwave de- vices and circuits load pull 

分 类 号：TN722[电子电信—电路与系统]