Simulation of positron backscattering and implantation profiles using Geant4 code  

作　　者：黄世娟 潘子文 刘建党 韩荣典 叶邦角 

机构地区：[1]Department of Modern Physics,University of Science and Technology of China [2]State Key Laboratory of Particle Detection and Electronics,University of Science and Technology of China

出　　处：《Chinese Physics B》2015年第10期527-534,共8页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11175171 and 11105139)

摘　　要：For the proper interpretation of the experimental data produced in slow positron beam technique, the positron implantation properties are studied carefully using the latest Geant4 code. The simulated backscattering coefficients, the implantation profiles, and the median implantation depths for mono-energetic positrons with energy range from 1 keV to 50 keV normally incident on different crystals are reported. Compared with the previous experimental results, our simulation backscattering coefficients are in reasonable agreement, and we think that the accuracy may be related to the structures of the host materials in the Geant4 code. Based on the reasonable simulated backscattering coefficients, the adjustable parameters of the implantation profiles which are dependent on materials and implantation energies are obtained. The most important point is that we calculate the positron backscattering coefficients and median implantation depths in amorphous polymers for the first time and our simulations are in fairly good agreement with the previous experimental results.For the proper interpretation of the experimental data produced in slow positron beam technique, the positron implantation properties are studied carefully using the latest Geant4 code. The simulated backscattering coefficients, the implantation profiles, and the median implantation depths for mono-energetic positrons with energy range from 1 keV to 50 keV normally incident on different crystals are reported. Compared with the previous experimental results, our simulation backscattering coefficients are in reasonable agreement, and we think that the accuracy may be related to the structures of the host materials in the Geant4 code. Based on the reasonable simulated backscattering coefficients, the adjustable parameters of the implantation profiles which are dependent on materials and implantation energies are obtained. The most important point is that we calculate the positron backscattering coefficients and median implantation depths in amorphous polymers for the first time and our simulations are in fairly good agreement with the previous experimental results.

关 键 词：positron beam backscattering coefficient implantation profile GEANT4 

分 类 号：O562.5[理学—原子与分子物理]