A novel diode string triggered gated-Pi N junction device for electrostatic discharge protection in 65-nm CMOS technology  

作　　者：张立忠 王源 陆光易 曹健 张兴 

机构地区：[1]Institute of Microelectronics,Peking University

出　　处：《Chinese Physics B》2015年第10期594-598,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant No.2011CBA00606)

摘　　要：A novel diode string-triggered gated-Pi N junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor（CMOS） technology, is proposed in this paper. An embedded gated-Pi N junction structure is employed to reduce the diode string leakage current to 13 n A/μm in a temperature range from 25°C to 85°C. To provide the effective electrostatic discharge（ESD） protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number.A novel diode string-triggered gated-Pi N junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor（CMOS） technology, is proposed in this paper. An embedded gated-Pi N junction structure is employed to reduce the diode string leakage current to 13 n A/μm in a temperature range from 25°C to 85°C. To provide the effective electrostatic discharge（ESD） protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number.

关 键 词：electrostatic discharge （ESD） gated-PiN junction diode string parasitic resistance redistribution 

分 类 号：TN31[电子电信—物理电子学]