A threshold voltage model of short-channel fully-depleted recessed-source/drain(Re-S/D) SOI MOSFETs with high-k dielectric  

作　　者：Gopi Krishna Saramekala Sarvesh Dubey Pramod Kumar Tiwari 

机构地区：[1]Department of Electronics and Communication Engineering,National Institute of Technology [2]Shri Ramswaroop Memorial University

出　　处：《Chinese Physics B》2015年第10期604-611,共8页中国物理B（英文版）

基　　金：supported by the Science and Engineering Research Board(SERB),Department of Science and Technology,Ministry of Human Resource and Development,Government of India under Young Scientist Research(Grant No.SB/FTP/ETA-415/2012)

摘　　要：In this paper, a surface potential based threshold voltage model of fully-depleted（FD） recessed-source/drain（Re-S/D）silicon-on-insulator（SOI） metal-oxide semiconductor field-effect transistor（MOSFET） is presented while considering the effects of high-k gate-dielectric material induced fringing-field. The two-dimensional（2D） Poisson＇s equation is solved in a channel region in order to obtain the surface potential under the assumption of the parabolic potential profile in the transverse direction of the channel with appropriate boundary conditions. The accuracy of the model is verified by comparing the model＇s results with the 2D simulation results from ATLAS over a wide range of channel lengths and other parameters,including the dielectric constant of gate-dielectric material.In this paper, a surface potential based threshold voltage model of fully-depleted（FD） recessed-source/drain（Re-S/D）silicon-on-insulator（SOI） metal-oxide semiconductor field-effect transistor（MOSFET） is presented while considering the effects of high-k gate-dielectric material induced fringing-field. The two-dimensional（2D） Poisson＇s equation is solved in a channel region in order to obtain the surface potential under the assumption of the parabolic potential profile in the transverse direction of the channel with appropriate boundary conditions. The accuracy of the model is verified by comparing the model＇s results with the 2D simulation results from ATLAS over a wide range of channel lengths and other parameters,including the dielectric constant of gate-dielectric material.

关 键 词：recessed-source/drain （Re-S/D） high-k gate-material fringing field and SCEs 

分 类 号：TN386[电子电信—物理电子学]