Fabrication and characterization of novel high-speed In GaAs/InP uni-traveling-carrier photodetector for high responsivity  

作　　者：陈庆涛 黄永清 费嘉瑞 段晓峰 刘凯 刘锋 康超 汪君楚 房文敬 任晓敏 

机构地区：[1]Institute of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications(BUPT) [2]State Key Laboratory of Information Photonics and Optical Communications(BUPT)

出　　处：《Chinese Physics B》2015年第10期612-616,共5页中国物理B（英文版）

基　　金：Project supported partially by the National Natural Science Foundation of China(Grant Nos.61274044 and 61077049);the National Basic Research Program of China(Grant No.2010CB327600);the Program of Key International Science and Technology Cooperation Projects,China(Grant No.2011RR000100);the 111 Project of China(Grant No.B07005);the Specialized Research Fund for the Doctoral Program of China(Grant No.20130005130001);the Natural Science Foundation of Beijing,China(Grant No.4132069)

摘　　要：A top-illuminated circular mesa uni-traveling-carrier photodetector（UTC-PD） is proposed in this paper. By employing Gaussian graded doping in In Ga As absorption layer and In P depleted layer, the responsivity and high speed response characteristics of the device are optimized simultaneously. The responsivity up to 1.071 A/W（the external quantum efficiency of 86%） is obtained at 1550 nm with a 40-μm diameter device under 10-V reverse bias condition. Meanwhile, the dark current of 7.874 n A and the 3-d B bandwidth of 11 GHz are obtained with the same device at a reverse bias voltage of3 V.A top-illuminated circular mesa uni-traveling-carrier photodetector（UTC-PD） is proposed in this paper. By employing Gaussian graded doping in In Ga As absorption layer and In P depleted layer, the responsivity and high speed response characteristics of the device are optimized simultaneously. The responsivity up to 1.071 A/W（the external quantum efficiency of 86%） is obtained at 1550 nm with a 40-μm diameter device under 10-V reverse bias condition. Meanwhile, the dark current of 7.874 n A and the 3-d B bandwidth of 11 GHz are obtained with the same device at a reverse bias voltage of3 V.

关 键 词：uni-traveling-carrier photodetector device growth and fabrication RESPONSIVITY 3-dB bandwidth 

分 类 号：TN15[电子电信—物理电子学]