Effect of Ge–GeO_2 co-doping on non-ohmic behaviour of TiO_2–V_2O_5–Y_2O_3 varistor ceramics  

作　　者：康昆勇 甘国友 严继康 易建宏 张家敏 杜景红 赵文超 荣雪全 

机构地区：[1]Faculty of Materials Science and Engineering,Kunming University of Science and Technology [2]Key Laboratory of Advance Materials of Yunnan Province [3]Key Laboratory of Advance Materials of Precious-Nonferrous Metals,Ministry of Education

出　　处：《Journal of Semiconductors》2015年第7期39-44,共6页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.51262017,51362017)

摘　　要：An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO2 on the TiO2-V2O5-Y2O3 varistor ceramics. The result shows that as the doping contents of V2O5 and Y2O3 are 0.5 tool%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO2 makes the highest α value （α = 12.8）, the lowest breakdown voltage Vlmg （VlmA = 15.8 V/ram） and the highest grain boundary barrier ФB （ФB = 1.48 eV）, which is remarkably superior to the TiO2-V2Os-Y203 varistor ceramics undoped with Ge and GeO2 and mono-doped with Ge or GeO2. The TiO2-V2Os-YEO3-Ge-GeO2 ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO2 on the TiO2-V2O5-Y2O3 varistor ceramics. The result shows that as the doping contents of V2O5 and Y2O3 are 0.5 tool%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO2 makes the highest α value （α = 12.8）, the lowest breakdown voltage Vlmg （VlmA = 15.8 V/ram） and the highest grain boundary barrier ФB （ФB = 1.48 eV）, which is remarkably superior to the TiO2-V2Os-Y203 varistor ceramics undoped with Ge and GeO2 and mono-doped with Ge or GeO2. The TiO2-V2Os-YEO3-Ge-GeO2 ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.

关 键 词：TiO2 varistor CO-DOPING nonlinear coefficient breakdown voltage Ge and GeO2 

分 类 号：TQ174.1[化学工程—陶瓷工业]