Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress  

作　　者：石磊 冯士维 刘琨 张亚民 

机构地区：[1]College of Electronic Information and Control Engineering,Beijing University of Technology

出　　处：《Journal of Semiconductors》2015年第7期78-82,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61376077,61201046,61204081);the Beijing Natural Science Foundation(Nos.4132022,4122005)

摘　　要：The phenomenon of self-changing on the device parameters and characteristics after a step voltage stress was applied to the gate is studied in A1GaN/GaN high electron mobility transistors. The device was measured every 5 rain after the stress was removed. The large-signal parasitic source （drain） resistance, transfer characteristics, threshold voltage, drain-source current, gate-source （drain） reverse currenwvoltage characteristics changed spontaneously after the removal of the stress. The time constant of tile self-changing was about 25 27 rain. The gate-source （drain） capacitance-voltage characteristics were constant during this process. Electrons were trapped by the surface states and traps in the AIGaN barrier layer when the device was under stress. The traps in the AIGaN barrier layer then released electrons in less than 10 s. The surface states released electrons continuously during the entire measurement stage, leading to the self-changing of mearsurement result.The phenomenon of self-changing on the device parameters and characteristics after a step voltage stress was applied to the gate is studied in A1GaN/GaN high electron mobility transistors. The device was measured every 5 rain after the stress was removed. The large-signal parasitic source （drain） resistance, transfer characteristics, threshold voltage, drain-source current, gate-source （drain） reverse currenwvoltage characteristics changed spontaneously after the removal of the stress. The time constant of tile self-changing was about 25 27 rain. The gate-source （drain） capacitance-voltage characteristics were constant during this process. Electrons were trapped by the surface states and traps in the AIGaN barrier layer when the device was under stress. The traps in the AIGaN barrier layer then released electrons in less than 10 s. The surface states released electrons continuously during the entire measurement stage, leading to the self-changing of mearsurement result.

关 键 词：AIGaN/GaN HEMTs surface states self-changing STRESS 

分 类 号：TN386[电子电信—物理电子学]