Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications  

作　　者：林体元 庞磊 王鑫华 黄森 刘果果 袁婷婷 刘新宇 

机构地区：[1]Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2015年第7期83-89,共7页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.61204086)

摘　　要：An optimized modeling method of 8 ×100μm A1GaN/GaN-based high electron mobility transistor （HEMT） for accurate continuous wave （CW） and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current-voltage （l-V） measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at Vgs = -3.5 V, Vds = 30 V with a frequency of 9.6 GHz are presented.An optimized modeling method of 8 ×100μm A1GaN/GaN-based high electron mobility transistor （HEMT） for accurate continuous wave （CW） and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current-voltage （l-V） measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at Vgs = -3.5 V, Vds = 30 V with a frequency of 9.6 GHz are presented.

关 键 词：A1GaN/GaN HEMT pulsed I-V trapping effect self-heating effect 

分 类 号：TN386[电子电信—物理电子学] TN78