High performance AlGaN/GaN HEMTs with AlN/SiN_x passivation  

作　　者：谭鑫 吕元杰 顾国栋 王丽 敦少博 宋旭波 郭红雨 尹甲运 蔡树军 冯志红 

机构地区：[1]National Key Laboratory of Application Specific Integrated Circuit (ASIC),Hebei Semiconductor Research Institute [2]China National Defense Sciences Technology Information Center

出　　处：《Journal of Semiconductors》2015年第7期94-97,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.60890192)

摘　　要：A1GaN/GaN high electron-mobility transistors （HEMTs） with 5 nm A1N passivation by plasma en- hanced atomic layer deposition （PEALD） were fabricated, covered by 50 nm SiNx which was grown by plasma enhanced chemical vapor deposition （PECVD）. With PEALD A1N passivation, current collapse was suppressed more effectively and the devices show better subthreshold characteristics. Moreover, the insertion of A1N increased the RF transconductance, which lead to a higher cut-off frequency. Temperature dependence of DC characteristics demonstrated that the degradations of drain current and maximum transconductance at elevated temperatures for the A1N/SiNx passivated devices were much smaller compared with the devices with SiNx passivation, indicating that PEALD A1N passivation can improve the high temperature operation of the A1GaN/GaN HEMTs.A1GaN/GaN high electron-mobility transistors （HEMTs） with 5 nm A1N passivation by plasma en- hanced atomic layer deposition （PEALD） were fabricated, covered by 50 nm SiNx which was grown by plasma enhanced chemical vapor deposition （PECVD）. With PEALD A1N passivation, current collapse was suppressed more effectively and the devices show better subthreshold characteristics. Moreover, the insertion of A1N increased the RF transconductance, which lead to a higher cut-off frequency. Temperature dependence of DC characteristics demonstrated that the degradations of drain current and maximum transconductance at elevated temperatures for the A1N/SiNx passivated devices were much smaller compared with the devices with SiNx passivation, indicating that PEALD A1N passivation can improve the high temperature operation of the A1GaN/GaN HEMTs.

关 键 词：A1GaN/GaN HEMTs plasma enhanced atomic layer deposition （PEALD） AIN PASSIVATION sub-threshold hysteresis thermal stability 

分 类 号：TN386[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]