632.8nm连续激光辐照可见光CMOS相机实验研究  

Experimental Study on a Visible Light CMOS Camera Irradiated by 632.8nm CW Laser

作　　者：盛良[1,2,3] 张震[2,3] 张检民[2,3] 徐作冬[2,3] 

机构地区：[1]四川大学物理科学与技术学院,成都610064 [2]西北核技术研究所,西安710024 [3]激光与物质相互作用国家重点实验室,西安710024

出　　处：《现代应用物理》2015年第3期181-185,共5页Modern Applied Physics

摘　　要：开展了632.8nm连续激光辐照可见光JHSM36Bf CMOS相机实验研究,获得了632.8nm连续激光使CMOS相机单像元饱和及全屏饱和的功率密度阈值。实验证实了CMOS比CCD抗激光干扰能力更强;连续激光比脉冲激光更容易实现对CMOS相机的干扰;分析了CMOS串扰现象与CCD的不同。用饱和面积法、相关度法和均方差法3种激光干扰图像质量评价方法,定量分析了CMOS成像受激光干扰的程度。The JHSM36Bf CMOS camera was irradiated by a 632.8 nm CW laser, and the laser power density thresholds which cause the single pixel saturation and full screen saturation of the CMOS camera were obtained. It was demonstrated that CCD cameras are more vulnerable to laser jamming than CMOS cameras, and CW laser is more likely to induce laser jamming than pulsed laser. The cross-talk phenomena in both CMOS and CCD cameras irradiated by CW laser were analyzed. The laser jamming effects on the images of CMOS cameras were evaluated quantitatively by three commonly used methods for image evaluation.

关 键 词：CMOS 激光辐照 功率密度阈值 激光干扰 

分 类 号：TN249[电子电信—物理电子学]