沟道和漏极散射机制对短沟道应变硅二极管性能的影响  

Effects of Scattering Mechanisms in the Channel and Drain Regions on the Transport Properties of Short-channel Strained-Si Diodes

作　　者：亚森江.吾甫尔 买买提明.艾尼 买买提热夏提.买买提 阿布都克力木.阿布都热合曼 

机构地区：[1]新疆大学机械工程学院,乌鲁木齐830046 [2]新疆大学物理科学与技术学院,乌鲁木齐830046 [3]日本UMC公司

出　　处：《材料导报（纳米与新材料专辑）》2015年第1期106-110,117,共6页

基　　金：国家自然科学基金(61366001;61464010)

摘　　要：新材料应变硅已成为目前高性能小尺寸半导体器件的研究热点,研究应变硅器件散射机制有利于理解载流子输运特性的物理机制。因此沟道和漏极区域分别建立了应变模型和散射模型,采用数值模拟方法对比研究了短沟道应变硅二极管中电子的输运特性。模拟结果表明,对于漏极区域中的散射模型,非弹性散射均促使器件的性能增强,而弹性散射则导致器件性能衰弱,这是由于应变诱导的能级分裂束缚了光学声子散射;相对于沟道区域,漏极区域的应变模型和散射机制对于短沟道硅二极管性能的影响较大。因此,对于短沟道半导体器件,除了探讨沟道区域应变和散射机制之外还需要分析漏极区域应变和散射机制的影响。The strained silicon, a new material, has become a research hotspot of high-performance small size semiconductor devices, and the study on scattering mechanism of strained silicon devices is in favor of understanding physical mechanism of carrier transport properties. Thus, strain models and scattering models in the channel and drain regions are established respectively, and electron transport properties of short channel strained silicon diode are comparatively investigated by numerical simulation method. The results show that, for the scattering model in the drain region, inelastic scattering can enhance device performance, and elastic scattering can reduce device performance, that is due to the strain-induced band splitting can suppress optical phonon scattering. Moreover, the effects of strain and scattering mechanisms in the drain region on performance of short-channel silicon diode are larger than these of channel region. Therefore, for short channel semiconductor device, besides to investigate the impact of strain and scattering mechanisms in the channel regions, it＇s need to analyze these in the drain regions.

关 键 词：应变 散射 沟道和漏极区域 硅二极管 蒙特卡洛模拟方法 

分 类 号：TN31[电子电信—物理电子学]