磁电多铁性薄膜  

Multiferroic Magnetoelectric Films

作　　者：张平[1] 

机构地区：[1]重庆材料研究院,重庆400707

出　　处：《材料导报（纳米与新材料专辑）》2015年第1期180-183,204,共5页

摘　　要：随着单相和复合材料的磁电耦合、多铁序研究的深入,对其机理的认识也不断深入。该类前沿性研究包括磁电薄膜的研究,期望能在高端磁电器件中发挥重要作用。简要介绍了一些重要的单相多铁性薄膜研究结果,包括磁和铁电相变温度相同及不同的系统。There is an increasing understanding of the mechanisms as the development of magnetoelectric coupling and multiferroic order in both single-phase and composite materials. These advance investigations include a range of studies on thin films, which are expected to play an important role in novel magnetoelectric devices. A brief summary of some of the significant results in studies on thin-film multiferroic are presented, with an emphasis on single-phase materials, and covering systems where the magnetic and ferroelectric transitions fall at the same and different temperature.

关 键 词：磁电耦合 多铁性薄膜 磁电器件 

分 类 号：O469[理学—凝聚态物理]