温差电材料Bi_(0.5)Sb_(1.5)Te_3双掺杂调控及热电性能研究  

Dual doping control and thermoelectric properties of Bi_(0.5)Sb_(1.5)Te_3 materials

作　　者：段兴凯[1] 胡孔刚[1] 丁时锋[1] 满达虎[1] 金海霞[1] 

机构地区：[1]九江学院机械与材料工程学院新能源材料研究所,江西九江332005

出　　处：《电源技术》2015年第9期1926-1928,共3页Chinese Journal of Power Sources

基　　金：国家自然科学基金资助项目(51161009);江西省教育厅科技资助项目(GJJ13722)

摘　　要：采用真空熔炼及热压方法制备Ga和Na共掺杂Bi0.5Sb1.5Te3热电材料。利用X射线衍射（XRD）技术对样品的物相结构进行了表征。在300~500K测量温度范围内,共掺杂样品的Seebeck系数均低于Bi0.5Sb1.5Te3的Seebeck系数,并随着Ga掺杂量的增加,Seebeck系数逐渐减小。共掺杂使样品的载流子浓度增加,从而有效地提高了材料的电导率。所有共掺杂样品的热导率都大于Bi0.5Sb1.5Te3的热导率,在Na掺杂浓度不变的情况下,随着Ga掺杂浓度的增加,热导率逐步增加,Na0.04Bi0.5Sb1.46-xGaxTe3（x=0.12）样品具有高电导率的同时,Seebeck系数和热导率的损失不是很大,材料的热电性能得到了改善,在300~475K测量温度范围内的热电性能优值与Bi0.5Sb1.5Te3相比较均有所提高,325K时的最大ZT值为1.4。Ga and Na dual doping Bi0.5Sb1.5Te3 thermoelectric materials were fabricated by vacuum melting and hot pressing method. The phase structure was characterized via X-ray diffraction （XRD）. The Seebeck coefficients of the dual doped samples are lower than those of the Bi0.5Sb1.5Te3 at the temperature range of 300-500 K. Seebeck coefficient gradually decreases with the increase of Ga concentration. The carrier concentration is increased by dual doping, and the electrical conductivity can be effectively improved. The thermal conductivity of the dual doped samples is larger than those of Bi0.5Sb1.5Te3. When Na doping concentration is constant, the thermal conductivity gradually increases with the increase of Ga concentration. The Na0.04Bi0.5Sb1.46-xGaxTe3 （x=0.12） samples with high electrical conductivity, the loss of Seebeck coefficient and thermal conductivity are not large. The merit figures of the thermoelectric properties are improved at the range of 300-475 K,and the maximum ZT value is 1.4 at 325 K.

关 键 词：碲化铋基合金 双掺杂 电输运性能 热输运性能 

分 类 号：TM913[电气工程—电力电子与电力传动]