InP/InGaAsP脊波导的单模特性与偏振特性研究  

A study of the single mode condition and polarization sensitivity properties of InP/InGaAsP rib waveguide

作　　者：张天恩[1] 唐军[1] 雷龙海 商成龙 刘俊[1] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,电子测试技术重点实验室,太原030051

出　　处：《半导体光电》2015年第4期605-609,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(91123036,91123016);国家自然科学基金杰出青年基金项目(51225504);国家“973”计划项目(2012CB723404);山西省青年学术带头人支持项目

摘　　要：以InP/InGaAsP脊形波导结构为研究对象,采用有限元算法(FEM),系统地仿真分析了在固定芯层厚度的情况下,不同脊高和脊宽条件下脊形波导的单模特性和偏振特性。在芯层厚度一定的情况下,脊宽越窄,刻蚀深度越浅,波导的传输模式越接近单模。在深刻蚀情况下,脊波导模双折射系数受到脊宽的影响较大,波导的偏振不敏感性较差;在浅刻蚀情况下,模双折射系数(Δn=nTE-nTM)受到脊宽和脊高的影响较为微弱,稳定在1.2×10-3。相关仿真和分析为基于InP/InGaAsP脊波导的光电子器件的结构设计提供了一定的理论支持。Theoretical analysis and sensitivity properties were reported for method （FEM）. The mathematic model was established, with the core height simulations of the single mode condition and polarization InP/InGaAsP rib waveguide, based on finite element of different rib width and height of InP rib waveguide remain unchanged. With the narrow ridge width and shallow etching depth, the transmission mode characteristics is close to single mode condition. When it comes to deep etching, the mode birefringence index is much higher and easily affected by the rib width, but when it comes to shallow etching, the impact of rib width and height on the mode birefringence is very weak. And the mode birefringence index is stable at 1.2×10^-3. The simulation results and analysis provide an accurate theoretical model for constructing high performance optoelectronic devices based on InP/InGaAsP rib waveguide.

关 键 词：InP/InGaAsP脊波导 单模条件 偏振特性 模双折射系数 光电子器件 

分 类 号：TN814[电子电信—信息与通信工程]