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作 者:宁晓山[1] 刘洋 毕娜[1] 李莎[1] 王波[1] 李国才[1]
机构地区:[1]清华大学材料学院陶瓷国家实验室,北京100084
出 处:《真空电子技术》2015年第4期6-8,共3页Vacuum Electronics
基 金:国家自然科学基金项目(51472136)
摘 要:由于铝与氧化铝陶瓷的润湿性很差,铝与氧化铝陶瓷的连接十分困难。本文采用热浸镀铝工艺,将陶瓷插入熔融铝液中定向移动后移出,可以在陶瓷表面形成一层厚度为数微米的铝膜。在热浸镀工艺中,通过调整热浸镀炉内气氛中的氧含量,可以防止界面氧化以及降低铝液表面能。使用高分辨透射电镜观察铝膜和陶瓷的连接界面,发现界面处无非晶态氧化层,铝在氧化铝表面外延生长。研究表明,热浸镀工艺中的低氧富铝环境会导致氧化铝表面发生重构,促进了氧化铝-铝体系的润湿。It is generally a difficult task to bond and the easily-formed oxide on the laying surface of aluminum on ceramics owing to the poor wettability aluminum. It is found that by a dip coating method, inserting the ceramics into molten aluminum and then withdrawing them, a few-micron-thick film can be coated on alumina ceramics. Appropriate adjustment of the O2 content in N2-purged furnace is important in dip coating process, which can prevent the oxidation of aluminum on laying surface and lower the sur- face energy. High resolution TEM observation reveals that aluminum atoms grow directly on the surface of alumina grains without any amorphous oxide at interface. The first-principle simulation further reveals that a surface reconstruction, occurred generally in an O-deficient/Al-excess condition, could be the reason for the super spreading of molten aluminum on the ceramics in dip coating process.
分 类 号:TB756[一般工业技术—真空技术]
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