厚薄膜混合氮化铝多层基板技术研究  

Thick-Thin Film Hybrid Technology of Aluminum Nitride Multilayer Substrate

作　　者：陈寰贝[1] 梁秋实[1] 刘玉根[1] 王子良[1] 

机构地区：[1]中国电子科技集团公司第五十五研究所,江苏南京210016

出　　处：《真空电子技术》2015年第4期9-10,20,共3页Vacuum Electronics

摘　　要：随着电子器件向着高密度高功率的方向发展,对于基板的散热与布线密度要求越来越高。为了适应这一趋势,研究了厚薄膜混合氮化铝基板技术,该技术结合了氮化铝高热导率、厚膜电路多层布线、薄膜电路精细布线的优势,能够满足未来高密度高功率器件产品需求。With the development of electronic components in the direction of high integration and high power, the heat dissipation and routing density of the substrate are becoming higher. In order to adapt to this trend, thick-thin film hybrid AIN substrate has been studied. The technology combines advantages of high thermal conductivity AlN substrate, thick film multilayer wiring and thin film fine wiring, and so it can meet the requirements of devices with high density and high power.

关 键 词：厚薄膜混合 氮化铝 高密度 高功率 

分 类 号：TM286[一般工业技术—材料科学与工程]