氮化硅陶瓷崩碎损伤的三维时空演化特征  

3D Time-space Evolution Characteristics of Si_3N_4 Ceramics during the Failure Process of Edge Chipping

作　　者：唐修检[1] 王健全[2] 田欣利[1] 刘谦[1,3] 吴志远[1] 雷蕾[1] 

机构地区：[1]装甲兵工程学院装备再制造技术国防科技重点实验室,北京100072 [2]中国航天员科研训练中心,北京100094 [3]装甲兵工程学院全军装备表面工程重点实验室,北京100072

出　　处：《人工晶体学报》2015年第8期2271-2276,2283,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51105378)

摘　　要：建立了氮化硅陶瓷的准静态单晶压痕崩碎损伤实验系统,应用声发射三维定位系统实时监测其损伤演化过程,应用三维显微系统观测陶瓷崩口损伤表面形貌,并分析了崩碎损伤过程的临界行为。结果表明:声发射事件的三维实时定位直观反映了陶瓷崩碎损伤过程中材料内部微裂纹的萌生、扩展、成核和贯通的损伤演化过程,其定位结果与陶瓷崩口三维几何形貌具有较好的一致性。陶瓷崩碎曲面主要沿着二次多项式的轨迹向陶瓷表面扩展。陶瓷崩碎损伤具有明显的临界行为,声发射计数率和释能率的变化都符合幂律奇异性规律。An experiment system was established to study the edge chipping failure process of Si3N4 by single indenter under quasi-static load, the acoustic emissions emitting from Si3N4 was monitored by AE 3D location system, the surface morphology of edge chipping was observed by 3D micro observation system, the critical behavior during the process of edge chipping was analyzed. The results show that ： 3 D real-time location of AE events can directly reflect the initiation, propagation, nucleation and coalescence of micro crack during the failure process of edge chipping. The location accuracy has a good consistency with the 3D surface morphology of edge chipping. The crack of edge chipping expands to the ceramic surface along the trajectory of a quadratic polynomial. There＇s obvious critical behavior during the failure process of edge chipping, and the change regulars of count rate and energy release rates conform to the power law.

关 键 词：工程陶瓷 崩碎损伤 时空演化 声发射定位 

分 类 号：TB32[一般工业技术—材料科学与工程]