CdS肖特基紫外探测器的研制  

Study on CdS schottky ultraviolet photodetector

作　　者：李忠贺[1] 王新宇[1] 李海燕[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2015年第9期1109-1111,共3页Laser & Infrared

摘　　要：基于微电子平面工艺,采用电子束蒸发Pt方法,制备了基于Cd S材料的肖特基紫外探测器。对该器件的I-V特性、光谱响应率、量子效率等参数进行了测试,结果表明器件具有良好的整流特性,室温零偏压下光谱响应范围250~500 nm,在500 nm波长处达到最大光谱响应率0.285 A/W,量子效率为75.3%。并根据热电子发射理论对测试结果进行了计算得到理想因子为1.024,肖特基势垒高度为0.859 e V。According to microelectronic flat processes, Cadmium Sulfide （ CdS ） Schottky ultraviolet photodetector was fabricated after evaporating Pt by electron beam to form Schottky contact. The I-V characteristic, spectrum responsivity and quantum efficiency were measured and analyzed. The results show that the response wavelength range is from 250 nm to 500 nm at room temperature without any biased voltage, and maximal spectrum responsivity is 0. 285 A/W at 500 nm,and the quantum efficiency is 75.3%. The Schottky barrier height and ideality factor are 0. 859 eV and 1. 024 respectively which is calculated by thermionic emission theory.

关 键 词：硫化镉 肖特基势垒 紫外探测器 

分 类 号：TN23[电子电信—物理电子学]