808nm大功率半导体激光器可靠性分析  

Reliability Analysis of 808 nm High Power Semiconductor Laser

作　　者：李雅静[1] 彭海涛[2] 

机构地区：[1]咸阳师范学院物理与电子工程学院,陕西咸阳712000 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《光电技术应用》2015年第4期5-7,79,共4页Electro-Optic Technology Application

基　　金：咸阳师范学院专项科研基金项目(12XSYK016)

摘　　要：激光器是理想的电光直接转换器件,延长半导体激光器的使用寿命,提高半导体激光器的可靠性,是大功率半导体激光器的研究热点。文中采用温度应力加速和电流步进应力两种老化方法对808 nm的大功率半导体激光器进行老化试验,得到寿命分别为1 682 h和1 498 h,实验结果基本一致,并在显微镜下观察破坏性老化试验之后的器件,分析得到失效原因主要来自腔面退化、焊料退化和欧姆接触不良。Laser is the ideal electro-optic direct converter, so prolonging the life of the semiconductor laser and improving the reliability of the laser are always the research focuses of high power semiconductor laser. Two meth？ods such as temperature stress acceleration and current stepping stress are used to perform the aging experiment of 808 nm high power semiconductor laser, and the life of the devices are 1 682 h and 1 498 h respectively, the same experiment result is obtained. Observation of the device after destructive aging tests using a microscope, failure rea？sons are analyzed and obtained, which are due to the surface degradation, solder degradation and bad ohmic con？tact.

关 键 词：大功率半导体激光器 温度应力加速老化 电流步进应力老化 可靠性分析 

分 类 号：TN248.4[电子电信—物理电子学]