带温度补偿的低功耗CMOS环形压控振荡器设计  

Design for low-power consumption CMOS annular VCO with temperature compensation

作　　者：李小飞[1] 刘宏[1] 袁圣越[1] 汪明亮[1] 田彤[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所无线传感网与通信重点实验室,上海200050

出　　处：《现代电子技术》2015年第18期98-101,共4页Modern Electronics Technique

基　　金：上海市经信委资助项目(13XI-32);上海市科委资助项目(14521106200)

摘　　要：基于UMC 65 nm CMOS工艺,设计了一款应用于锁相环频率综合器中的带温度补偿的低功耗CMOS环形压控振荡器。环形压控振荡器采用3级交叉耦合延时单元构成。仿真结果表明,压控振荡器输出频率范围为735~845 MHz;在温度补偿下,温度变化从-60~100oC时,振荡器输出频率漂移中心频率790 MHz±10 MHz;当振荡频率为790 MHz时,在偏离其中心频率1 MHz处,压控振荡器的相位噪声为-99 d Bc/Hz;1.2 V电源供电情况下,压控振荡器的功耗为0.96 m W;版图面积约为0.005 mm^2。A low-power consumption CMOS voltage controlled oscillator （VCO） with temperature compensation was de-signed based on UMC 65 nm CMOS technical,which is applied to phase-locked loop frequency synthesizer and consists of three-stage cross coupling delay units. The simulation results verify that the output frequency range of VCO is 735~845 MHz,the drift-ing center frequency of VCO output is 790 MHz＋10 MHz under temperature compensation when the temperature changes from 60 to 100 ℃, the phase noise is -99 dBc/Hz at the place where 1 MHz deviation from the center frequency when the oscillating frequency is 790 MHz,and the power consumption of VCO is 0.96 mW under the condition of 1.2 V power supply. The chip area is approximate to 0.005 mm^2.

关 键 词：低功耗 CMOS环形压控振荡器 温度补偿 系统设计 

分 类 号：TN752-34[电子电信—电路与系统]