用于射频集成的高Q硅基电感的优化设计  

Optimization design of high-Q silicon-based inductor applied to RF integration

作　　者：王惠娟[1,2] 潘杰[1,2] 任晓黎 曹立强[1,2] 于大全[1] 万里兮[1] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]华进半导体封装先导技术研发中心有限公司,江苏无锡214135

出　　处：《现代电子技术》2015年第18期106-109,共4页Modern Electronics Technique

基　　金：重大科学技术专项(2013ZX02502-004);高效集成扇出型封装及任意互连高频封装基板(2014ZX02501003)

摘　　要：采用理论分析与电磁仿真结合的方法,对硅上多层金属构成的螺旋电感进行电性能研究,优化并获得一种适用于射频电路集成的硅基射频高Q电感。对于影响电感Q值的多种损耗机制,重点研究了趋肤效应对电感的影响。并通过结构参数及金属层叠优化后,硅上电感的Q值可以达到60以上,自谐振频率可以达到10 GHz以上,可以较好地应用于射频系统中的滤波选频及匹配等网络。The electrical performance of silicon-based spiral indicator constituted with multi-layer metal is studied by the combined method of theoretical analysis and electromagnetic simulation. The silicon-based RF high-Q indicator applied to RF cir-cuit integration was optimized and acquired. Among various loss mechanisms influencing Q-value of the indicator,the influence of skin effect on the indicator is researched emphatically. The silicon-based Q-value of the indicator after optimizing the struc-ture parameter and the metal stacking can reach 60,and the self-resonant frequency can achieve 10 GHz. The inductor can be better applied to networks of filtering,frequency-selecting and matching in RF system.

关 键 词：硅上电感 趋肤效应 射频系统集成 电磁仿真 

分 类 号：TN702-34[电子电信—电路与系统]