SiO_2-Si_3N_4-SiO_2复合梁谐振式压力传感器结构设计与分析  

Design and Analysis of SiO_2- Si_3N_4- SiO_2 Composite Resonant Beam Pressure Sensor

作　　者：李新[1] 薛阳[1] 李春风 

机构地区：[1]沈阳工业大学,辽宁沈阳110870 [2]沈阳通美电器有限公司,辽宁沈阳110000

出　　处：《仪表技术与传感器》2015年第8期13-15,共3页Instrument Technique and Sensor

基　　金：辽宁省自然基金资助项目(20102162)

摘　　要：提出了一种采用SiO2-Si3N4-SiO2复合谐振梁结构的谐振式压力传感器。采用有限元分析技术分别对谐振梁和传感器芯片结构进行了电热分析、模态分析以及谐响应分析,最后对SiO2-Si3N4-SiO2复合梁谐振式压力传感器的工艺进行了探讨,表明通过多晶硅牺牲层技术能更好地得到Si O2-Si3N4-Si O2复合谐振梁,具有良好的选频特性。The resonant pressure sensor with SiO2-Si3 N4-SiO2 composite beam structure was proposed in this paper.Finite el-emet method was adopted to analyze electrothermal analysis,modal analysis and harmonic response analysis of the resonance beam and sensor chip architecture.The SiO2-Si3 N4-SiO2 composite beam resonant pressure sensor fabrication process were discussed in this paper.SiO2-Si3 N4-SiO2 composite resonant beam was fabricated with polysilicon sacrificial layer technology,which has charac-teristic of good selection frequency.

关 键 词：有限元 SiO2-Si3 N4-SiO2复合梁 压力传感器 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]