Fabrication of high-quality all-graphene devices with low contact resistances  

作　　者：Rong Yang Shuang Wu Duoming Wang Guibai xie Meng Cheng Guole Wang Wei Yang Peng Chen Dongxia Shi Guangyu Zhang 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2]Collaborative Innovation Center of Quantum Matter, Beijing 100190, China

出　　处：《Nano Research》2014年第10期1449-1456,共8页纳米研究（英文版）

基　　金：This work was supported by the National Basic Research Program of China （973 Program） （Nos. 2013CB934500 and 2013CBA01600）, the National Natural Science Foundation of China （NSFC） （Nos. 61325021, 91223204, 11174333 and 11204358）, and the Chinese Academy of Sciences.

摘　　要：All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature （RT） between a bilayer graphene channel and a multilayer graphene electrode can be as low as -5 Ω.·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.All-graphene 设备是有简单布局和低接触电阻的 graphene 设备的新班。这里，我们为 all-graphene 设备报导干净制造策略经由一帮助缺点的各向异性的蚀刻。同样制作的 graphene 没有污染并且保留太古的 graphene 的质量。在在一条 bilayer graphene 隧道和一个多层的 graphene 电极之间的房间温度(RT ) 的接触抵抗能象 5

关 键 词：GRAPHENE all-graphene devices THINNING contact resistance 

分 类 号：TN303[电子电信—物理电子学] TM503.5[电气工程—电器]