Direct LED writing of submicron resist patterns： Towards the fabrication of individually-addressable InGaN sub-micron stripe-shaped LED arrays  

作　　者：Zheng Gong Benoit Guilhabert Zhitao Chen Martin D. Dawson 

机构地区：[1]Institute of Photonics, University of Strathclyde, Wolfson Centre, 106 Rottenrow, Glasgow G40NW, UK [2]Guangdong General Research Institute for Industrial Technology, 363 Changxin Road, Tianhe District, Guangzhou 510650, China

出　　处：《Nano Research》2014年第12期1849-1860,共12页纳米研究（英文版）

摘　　要：Submicron stripe-shaped InGaN light-emitting diode （LED） arrays with individually addressable capabilities are demonstrated. The critical submicron- stripe metallic electrodes, which define the emission pattern, are formed by direct LED writing in a mask-free manner. The individually addressable submicron-stripe LEDs show excellent performance in terms of their electrical characteristics （with typical turn-on voltage of 3 V, operational stability and power output up to 28 ~W at 3 mA）. Unlike conventional broad-sized LEDs, the efficiency droop of the submicron-stripe LED is significantly suppressed--in fact, there is no efficiency droop for current densities up to 100 A/cm^2. Furthermore, the submicron-stripe LED shows a lower temperature-dependent shift of the emission wavelength. The lateral emission width is increased with increasing injection current, resulting in a wider lateral emission size than the metallic submicron-stripe electrode. The underlying physics of these phenomena are analysed. Such submicron-stripe LED arrays open up promising applications in nanophotonics and bio-sensing.亚微米塑造条纹的 InGaN 轻射出的二极管(带) 有个别地设法解决的能力的数组被表明。批评 submicronstripe 金属性的电极，定义排放模式，被直接带的作品以一种没有面具的方式形成。个别地设法解决的亚微米条纹 LEDs 以他们的电的特征显示出优秀性能(与 3 的典型刺激电压， V，运作的稳定性和力量在 3 妈输出多达 28 W ) 。不同于常规女人大小的 LEDs，效率带的亚微米条纹低垂是显著地压制在里面的事实，没有效率为当前的密度低垂直到 100 A/ 厘米 < 啜 class= “ a-plus-plus ” > 2 </sup> 。而且，带的亚微米条纹显示出排放波长的更低的温度依赖者移动。侧面的排放宽度与增加注射电流被增加，导致比金属性的亚微米条纹电极的一种更宽的侧面的排放尺寸。这些现象的内在的物理被分析。带的数组开创在 nanophotonics 答应应用程序的如此的亚微米条纹并且察觉到简历。

关 键 词：direct writing light-emitting diodes electroluminescence efficiency droop mask-free lithography 

分 类 号：TN312.8[电子电信—物理电子学] TU113.83[建筑科学—建筑理论]