电沉积Co掺杂ZnO的场发射特性研究  

FIELD-EMISSION PROPERTIES OF Co-DOPED ZnO SYNTHESIZED BY ELECTRODEPOSITION

作　　者：王爱华[1] 姬晓旭[1] 张萍[1] 刘旭焱[1] 

机构地区：[1]南阳师范学院物理与电子工程学院,河南南阳473061

出　　处：《低温物理学报》2015年第5期385-389,共5页Low Temperature Physical Letters

基　　金：河南省自然科学基金(批准号:132102210048)资助的课题~~

摘　　要：在ITO衬底上电沉积了Co掺杂ZnO系列样品,并用X射线粉末衍射仪和扫描电子显微镜测试了样品的结构和表面形貌.结果表明Co掺杂并没有改变ZnO的六方纤锌矿结构,而只在一定程度上改变了表面形貌.样品的场发射特性测试结果显示,随着Co掺杂浓度的增大,开启场强逐渐增大,进而可以判断ZnO体系的带隙依次变窄.Co掺杂引起ZnO能带结构的变化可归因于掺杂元素引入的d电子与基体材料导带和价带中的s、p电子之间的强的sp-d交换相互作用,这将为ZnO的带隙调控提供一种新的思路.Co-doped ZnO were electrodeposited on the ITO substrates. The structure and surface morphology of the samples was analyzed by X-ray diffraction and scanning electron microscope. The field-emission characteristics of the prepared Co-doped ZnO were also examined. The results indicate that the Co-doping cause the turn-on field increasing by increasing the concentration of the Co-dopant, which is concerned with the band gap changing of the ZnO doping system. The band gap changing could be attributed to the strong sp-d exchange interactions between the band s, p electrons and the localized d electrons of the doping element; this will provide a new idea about the band gap control of ZnO system.

关 键 词：Co掺杂ZnO 电沉积 场发射特性 

分 类 号：O614.241[理学—无机化学] O483[理学—化学]