热氧化法中温度对Ga_2O_3薄膜性质的影响  

Influence of oxidation temperature on properties of Ga_2O_3 films grown by dry thermal oxidizing the GaN epilayer

作　　者：孙景昌[1] 刘奎朝 马章微 赵廷[1] 王玉新[1] 张曦文[1] 郎月怡 李成仁[1] 

机构地区：[1]辽宁师范大学物理与电子技术学院,辽宁大连116029

出　　处：《辽宁师范大学学报（自然科学版）》2015年第3期322-326,共5页Journal of Liaoning Normal University:Natural Science Edition

基　　金：辽宁省高等学校杰出青年学者成长计划项目(LJQ2013109);大连市科学技术基金项目(2013J21DW026)

摘　　要：利用干热氧化方法,对蓝宝石衬底上沉积的GaN薄膜进行热氧化处理制备出了Ga2O3薄膜.研究了氧化温度对Ga2O3薄膜的结构、形貌、氧化层厚度和化学组分的影响.X射线衍射结果显示,氧化后的GaN薄膜上形成了Ga2O3薄膜.当氧化温度处在850-950℃时,Ga2O3薄膜呈现出单一的β型结构,而当氧化温度高于1000℃时,Ga2O3薄膜呈现出多晶结构.扫描电子显微镜测试显示,Ga2O3薄膜的表面由三角岛状结构组成,这些岛具有直线边界,岛的尺寸随着氧化温度的升高而逐渐增加.Ga2O3薄膜的厚度随着氧化温度的升高迅速增加,拟合结果显示,氧化层厚度和氧化温度之间为指数依赖关系.利用X射线能谱测试,研究了Ga2O3薄膜中元素组成情况.Ga2O3 films were grown on GaN film by dry thermal oxidation of the underlying GaN layer in oxygen ambient.The influence of oxidation temperature on the structure,morphology,oxide depth and optical properties of Ga2O3 films were investigated systematically.The singleβphase Ga2O3 films were formed on the GaN film for the oxide temperature ranged between 850 ℃ and950 ℃.As the oxidation temperatures reach up to 1 000℃,polycrystalline structured Ga2O3 films were formed on the GaN as confirmed by X-ray diffraction（XRD）measurements.Scanning electrical microscope（SEM）results indicated that the surface of the Ga2O3 films was composed of many triangle islands with straight boundary.The mean scale of the triangle islands of the oxide films increased with the increasing oxide temperature.The calculation suggested that the thickness of the oxide films showed an exponentially dependence on the oxide temperature.The composition of the Ga2O3 was investigated by the energy dispersive X-ray spectroscopy.

关 键 词：GAN 薄膜 GA2O3 热氧化 氧化温度 

分 类 号：TB34[一般工业技术—材料科学与工程]