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作 者:张瑞[1,2] 梁庭[1,2] 熊继军[1,2] 刘雨涛[1,2] 王涛龙 王心心[1,2]
机构地区:[1]中北大学仪器科学与动态测试教育部重点实验室,太原030051 [2]中北大学电子测试技术国防科技重点实验室,太原030051
出 处:《传感技术学报》2015年第8期1125-1130,共6页Chinese Journal of Sensors and Actuators
基 金:funded by the National Science Foundation for Distinguished Young Scholars of China(51425505);National Natural Science Foundation of China(51405454)
摘 要:对传统的SOI压阻式压力传感器进行了结构优化。目的是提高灵敏度,以满足在高温环境下大量程压力测量的实际需求。通过力学性能模拟,采用浅凸台结构来提高灵敏度和测量范围。分析并模拟了凸台厚度和形状对灵敏度的影响。得到了适合高温工作的掺杂浓度,压敏电阻的尺寸,金属引线的材料和布局。电阻放置在(σl-σt)最大的区域以保持灵敏度和线性度。采用U形电阻补偿在浅凸台制作过程中的工艺偏差对灵敏度的影响。有限元分析(FEA)表明,优化后的芯片结构可以测量10 MPa范围内的压力,灵敏度高达86.6 m V/(V·MPa),非线性误差在0.1%以下。和其他文献报道的大量程压力传感器相比,浅凸台芯片结构灵敏度和过载能力优异。This paper focuses on structural design for optimizing sensitivity of traditional piezoresistive SOI pressure sensor to enhance measurement range in high-temperature environments. By modeling mechanical properties,a shallow-boss configuration is adopted for increasing sensitivity and measurement range. Key influence factors of sensitivity including boss thickness and shape are analyzed and simulated. Doping concentration,size of single piezoresistor,arrangement of metal wires and their material are obtained when taking into account device high-temperature performance. Piezoresistor location is arranged on the basis of taking full advantage of maximum(σl-σt)regions to maintain sensitivity and linearity. According to stress distribution of the diaphragm,U-shaped piezoresistors are finally adopted by considering sensitivity loss due to fabrication deviation of shallow bossed structure. Finite element analysis (FEA)results show that the optimum design enables the sensor chip to operate in wider pressure condition(within 10 MPa)with a high sensitivity of 86.6 mV/(V · MPa)and excellent nonlinearity is less than 0.1%. Compared with other current wide-range sensors,the strength of shallow central bossed structure lies in sensitivity and overload capacity.
关 键 词:大量程 SOI压阻式压力传感器 高温 有限元分析(FEA)
分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置]
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