透明导电材料Cd_2SnO_4的制备Ⅱ—热压烧结  

Study about the preparation of transparent conductive material Cd_2SnO_4 Ⅱ—Hot pressing

作　　者：白雪[1] 王星明[1] 储茂友[1] 张碧田[1] 段华英[1] 石志霞[1] 孙静[1] 韩沧[1] 

机构地区：[1]北京有色金属研究总院稀有金属与冶金材料研究所,北京100088

出　　处：《粉末冶金技术》2015年第4期259-263,共5页Powder Metallurgy Technology

摘　　要：将2:1摩尔比的CdO与SnO_2混合粉体进行原位热压烧结,制备Cd_2SnO_4。采用XRD衍射仪、四探针电阻测试仪和扫描电镜,分析热压气氛,Sb掺杂元素以及热处理工艺对Cd_2SnO_4靶材的物相结构和导电性能的影响。结果表明:900℃原位热压烧结时,由于温度低,扩散反应发生不完全,生成部分Cd_2SnO_4化合物,少量Cd和Sn元素仍以氧化物的形式存在,未出现第二相CdSnO_3;氩气烧结比真空烧结更有利于扩散和化合反应发生;掺杂1%(质量分数)Sb元素的靶材电阻率降低至0.5×10^(-3)Ω·cm。高温退火热处理时扩散反应得以继续,靶材中Cd_2SnO_4含量有明显增加。为了克服原位热压温度和保温时间的限制所引起的化合反应不完全,优化热压工艺如下:采用单相Cd_2SnO_4复合粉体为原料,热压温度为1050℃,保温时间2小时,所得靶材均匀且晶粒细小,致密度达到92%,电阻率低至3×10^(-4)Ω·cm,第二相CdSnO_3含量低于2%,满足了镀膜用Cd_2SnO_4靶材的性能要求。In-situ hot pressing experiments were conducted at 900 ℃ using 2：1 proportion of CdO and SnO2 powder as mixed raw material. Study about the influence of hot pressing atmosphere, Sb element doping and heat treatment on structural evolution of Cd2 SnO4 target and resistivity was carried out by using XRD diffraction , four-probe resistance tester and scanning electron microscope. The results are as follows： Under 900 ℃ in-situ hot pressing, the diffusion reaction occurs incompletely because of the low temperature , most of Cd2 SnO4 are generated but a small amount of Cd and Sn elements exist as oxides and the second phase CdSnO3 does not appear. Compared to the vacuum hot-pressing, Argon atmosphere hot-pressing is more conducive to the proliferation and compounds react. The resistivity of target which doped with lwt% Sb elements decreases to 0. 5 × 10-3 Ω cm. At high temperature annealing, the diffusion reaction continues and the content of Cd2 SnO4 increase significantly. Based on the above results, due to limitations of temperature and holding time in situ hot- pressing , the combination reaction is not complete. So the optimization hot pressing process is as follows ： The raw material is Cd2 SnO4 composite powder of single phase; Hot-pressing temperature is 1050 ℃ ; Holding time is 2 hours. The resulting target which the relative density is 92% has uniform structure, fine grain and low resistivity about 3 × 10-4 Ω cm. The content of second phase CdSnO3 is less than 2wt%. The prepared Cd2SnO4 target meets the need of performance requirements.

关 键 词：Cd_2SnO_4 靶材 热压烧结 

分 类 号：TF123.111[冶金工程—粉末冶金]