SOI温度补偿效应的全集成高线性度Gm-C滤波器设计  

Realizationof SOI Fully Intergrated Highly Linearity Gm-C Filter for Temperature Compensation

作　　者：孙书龙[1] 林敏[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《电子器件》2015年第4期779-784,共6页Chinese Journal of Electron Devices

摘　　要：为了补偿温度变化对滤波器频率响应造成的漂移,提出了一种全差分运算放大器,该运算放大器采用电压负反馈方式稳定输出共模电平,调节输入对差分管衬底偏置来改变阈值电压差,从而调节放大器的跨导来调整滤波器的截止频率,实现了基于Gm-C结构的三阶Chebyshev低通滤波器,滤波器采用GSMC的0.13μm SOI工艺,电源电压1.2 V,6层金属设计,仿真结果表明,该滤波器通带增益0 d B,-1 d B截止频率8 MHz,38 MHz处增益衰减达到-35 d B,带内波动0.5 d B,输入为1 MHz,400 m V Vpp时,THD为-57 d B,功耗7 m W.在特殊环境具有明显的优势。A fully differential Operational Amplifier is proposed,which is adopted the voltage feedback technology to stablize the common mode output voltage,the Vthcan be adjusted according to the substrate bias on the input differential pairs,resulting in the change of the Gm of the amplifier as well as the cut-off frequency of the filter,which can be untilized to compensate the frequency offset caused by the temperature fly. The 3th order Chebyshev low pass filter is complemented on the 0. 13 μm SOI GSMC technics,source voltage is 1. 2 V and consists of 6 layermetals.The filter can achieve 0 d B voltage gain in the pass-band,8 MHz cut-off frequency-1 d B gain and 35 d B attenuation at 38 MHz,the ripple within band achieves 0. 5 d B,when 1 MHz,400 m V Vpp sine signal applied into the circuit,the THD can reach-57 d B,and consumes 7 m W power from the source,In special application,it takes remarkable advantage.

关 键 词：GM-C滤波器 阈值漂移 衬底偏置 温度补偿 

分 类 号：TN4[电子电信—微电子学与固体电子学]