Demonstration of ultralow-threshold 2 micrometer microlasers on chip  

作　　者：FAN HuiBo JIANG XiaoShun DING Yang XIAO Min 

机构地区：[1]National Laboratory of Solid State Microstructures and College of Engineering and Applied Sciences, Nanjing University [2]Department of Physics, University of Arkansas

出　　处：《Science China(Physics,Mechanics & Astronomy)》2015年第11期23-27,共5页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Key Basic Research Program of China(Grant Nos.2012CB921804 and 2011CBA00205);the National Natural Science Foundation of China(Grant Nos.61435007 and 11321063)

摘　　要：We demonstrate ultralow-threshold thulium-doped, as well as thulium-holmium-codoped, microtoroid lasers on silicon chips, operating at the wavelength of around 2 ?m. High quality factor whispering gallery mode(WGM) microtoroid cavities with proper thulium and holmium concentrations are fabricated from the silica sol-gel films. The highly confined WGMs make the microcavity lasers operate with ultralow thresholds, approximately 2.8 ?W and 2.7 ?W for the thulium-doped and the thulium-holmium-codoped microlasers, respectively.We demonstrate ultralow-threshold thulium-doped, as well as thulium-holmium-codoped, microtoroid lasers on silicon chips, operating at the wavelength of around 2 μm. High quality factor whispering gallery mode （WGM） microtoroid cavities with proper thulium and holmium concentrations are fabricated from the silica sol-gel films. The highly confined WGMs make the microcavity lasers operate with ultralow thresholds, approximately 2.8 μW and 2.7 μW for the thulium-doped and the thuli- um-holmium-codoped microlasers, respectively.

关 键 词：MICROCAVITY MICROLASER integrated optics devices 

分 类 号：TN248[电子电信—物理电子学]