磁控溅射法制备一维CdTe纳米棒阵列研究  

One-dimensional CdTe nanorod arrays preparation by the magnetron sputtering method

作　　者：罗炳威 邓元[2] 高歌 

机构地区：[1]中国航空研究院新技术研究所,北京100012 [2]北京航空航天大学材料科学与工程学院,北京100191

出　　处：《功能材料》2015年第18期18043-18047,共5页Journal of Functional Materials

基　　金：国家自然科学基金面上资助项目(51172008;51002006);国家自然科学基金创新团队资助项目(50921003)

摘　　要：利用磁控溅射法,研究了不同基底温度和工作气压对CdTe薄膜微纳米结构的影响.XRD 和SEM 表征结果表明,基底温度直接决定着CdTe粒子的生长和表面扩散能力,工作气压会直接影响入射在衬底表面的粒子能量,溅射功率决定提供CdTe粒子的量.通过生长条件的进一步探索和优化,最终在溅射功率为84W、工作气压为0.4Pa和石英基底温度为200-450℃时成功获得直径约150nm,形貌均一的一维CdTe纳米棒阵列.The different microstructures of CdTe thin films are prepared by magnetron sputtering method through changing the substrate temperature,working pressure and sputtering power. The XRD and SEM results show that the abilities of growth and surface diffusion of CdTe particles are directly determined by the substrate temperature. Meanwhile,the working pressure can affect the energy of incident CdTe particles and the quantities of the CdTe particles are determined by the sputtering power. Finally,the uniform one-dimensional CdTe nanorod arrays with diameter about 150 nm are achieved at sputtering power of 84 W,working pressure of 0. 4 Pa and the temperature of quartz substrate within 200-450

关 键 词：CDTE 纳米棒 阵列 纤维锌矿相 

分 类 号：TB332[一般工业技术—材料科学与工程]