基于弧后鞘层发展分析的直流真空断路器换流参数优化  

Optimization Design of Commutation Circuit of DC Vacuum Circuit Breaker

作　　者：刘晓明[1] 于德恩[1] 邹积岩[2] 

机构地区：[1]沈阳工业大学电气工程学院,沈阳110870 [2]大连理工大学电气工程学院,大连116024

出　　处：《真空科学与技术学报》2015年第9期1082-1087,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金重点项目(No.51337001);国家自然科学基金项目(No.51377106)

摘　　要：搭建直流真空断路器模块,基于基尔霍夫定律,结合四阶龙格库塔法,对直流真空断路器开断过程各阶段进行数值计算与分析。以寻求换流电容器最小化为目标,利用经典遗传算法,优化换流回路参数。同时,基于连续过渡模型,对弧后介质恢复过程中鞘层发展阶段进行仿真分析。仿真结果表明:鞘层发展阶段中,鞘层厚度呈指数趋势变化。以击穿距离作为重击穿判据,结合判据,对换流参数进一步优化,实现介质恢复与换流回路设计有效结合。优化结果提高换流回路设计合理性,利于直流真空断路器可靠开断。The two-step optimization design of the commutation circuit of DC vacuum circuit breaker（VCB）. First, the distinctive stages in VCB-switching, particularly the sheath-growth stage, were empirically approximated, physically modeled with the equivalent circuits, analytically calculated in Kirchhoff law combined with the 4th-order Runge-Kutta method,and numerically simulated in classical genetic algorithm（GA）. With the reliability and cost as the two criteria,the preliminarily optimized inductance and capacitance were estimated to be 149μH and 193 μF, respectively, in the GA sim- ulation. Next, the optimization was performed for a second time. The simulated results of the sheath-development stage show that the sheath grows exponentially with time. The re-breakdown, assumed to occur at a time when the sheath thick- ness is smaller than the breakdown distance, was specified as an additional criterion in the GA simulation. The optimized commutation inductance and capacitance were evaluated be 207μH and 269μF, respectively.

关 键 词：直流真空断路器 遗传算法 连续过渡模型 鞘层 重击穿 

分 类 号：TM561.2[电气工程—电器]