硅基MZI结构光调制器静态消光比  

Extinction Ratio of the MZI-Based Optical Silicon Modulator

作　　者：桂林[1] 邵宇丰[1] 左健存[1] 王胜利[2] 孙秋冬[1] 方安乐[1] 周志彬[3] 张华[1] 

机构地区：[1]上海第二工业大学计算机与信息工程学院,上海201209 [2]上海第二工业大学文理学部,上海201209 [3]湖南师范大学物理与信息科学学院,长沙410081

出　　处：《上海第二工业大学学报》2015年第3期228-235,共8页Journal of Shanghai Polytechnic University

基　　金：上海第二工业大学校级重点学科(No.XXKZD1302);上海第二工业大学校基金项目(No.EGD14XQD03;No.EGD14XQD01);湖南省自然科学基金(No.11JJ6053)资助

摘　　要：硅基光调制器技术是当前硅基光子学技术领域较为活跃的一个分支。结合硅基光子器件的材料特性和常见横截面波导结构,研究了硅基MZI结构光调制器的静态消光比特性,论述了光调制器发"1"码时所加峰值电压、工作波长选择和移相器几何尺寸对静态消光比的影响。研究表明,光调制器发"1"码时所加峰值电压较小时,消光比的变化量较大;在其他参数相同的情况下,工作波长的选择对光调制器的消光比有很大影响;在调制器尺寸选择方面,倾向于选择两臂较长,但两臂长度差较小的结构,因为此时的消光比较大,同时对工作波长变化不敏感。The technology for realizing silicon optical modulator is a hot branch in silicon photonics. Considering the material character of silicon photonic device and the transverse profile of waveguide, the static extinction ratio property of MZI based silicon optical modulator is investigated. Then the following issues are discussed： the influences of applied peak voltage of code ＂1＂, operating wavelength and the size of phase shifter on the static extinction ratio. The significant results are as follows： the changing rate of the extinction ratio is large when the applied peak voltage of code ＂1＂ is small; the extinction ratio is sensitive to the operating wavelength when other conditions are the same; the size of optical modulator prefers the structures with two large arms but low length difference between them. At this circumstance, the extinction ratio in silicon modulator is large and is also insensitive to the operating wavelength.

关 键 词：硅光子学 光调制器 MZI结构 消光比 光通信 

分 类 号：TN761[电子电信—电路与系统]