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出 处:《半导体技术》2015年第10期739-743,共5页Semiconductor Technology
基 金:国家自然科学基金项目(61271090);四川省科技支撑计划项目资助(2015GZ0103)
摘 要:当输入电压或者负载电流变化时低压差线性稳压器(LDO)系统稳定性是其研究热点和设计难点。针对这一问题,设计了一款加入动态补偿电路的快速响应LDO,这种新颖的LDO结构能有效改善在不同负载电流或者输入电压下系统的稳定性能。其适用电压范围为4.5~16.0 V,输出电压5.0 V,具有低功耗、带宽宽等特性。使用Hspice软件对设计的LDO进行了仿真验证,在典型工艺角下,负载电流经100 m A/μs突变时,输出电压突变量最大为105 m V,响应恢复时间平均约2.1μs。环路特性仿真结果表明,该LDO带宽为4.9 MHz,3 d B带宽为3.5MHz,相位裕度为约76°,且片内补偿电容仅0.3 p F。The system stability of the low dropout regulator( LDO) is the hotspot and design challenge when the input voltage or the load current changes. To solve this problem,a fast response LDO with the dynamic compensation circuit was designed. The performance and stability of the system can be effectively improved by this novel LDO structure under different load currents or input voltages. The LDO has low power consumption and wide bandwidth with applicable input voltages ranging from 4. 5 V to16. 0 V and output voltage of 5. 0 V. The LDO was simulated and verificated with Hspice software. The results show that the maximum output voltage step of this LDO is 105 m V at a load step of 100 m A / μs under the typical process,while the average response and recovery time is about 2. 1 μs. The results of the LDO loop characteristics simulation show the a loop bandwidth of 4. 9 MHz,a 3 d B loop bandwidth of 3. 5 MHz and a phase margin of about 76° with the chip compensation capacitor of 0. 3 p F.
关 键 词:电源管理 快速响应LDO 瞬态响应 宽带宽 动态补偿
分 类 号:TN432[电子电信—微电子学与固体电子学] TM44[电气工程—电器]
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