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机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051
出 处:《半导体技术》2015年第10期749-753,共5页Semiconductor Technology
摘 要:结合混合微波集成电路(HMIC)工艺和砷化镓单片微波集成电路(MMIC)工艺各自优势,设计制作了一款小型化大功率S波段平衡式限幅MMIC低噪声放大器。采用平衡式结构,提高了限幅功率容量和可靠性。由于金丝键合线的等效电感具有更高Q值,低噪声放大器单片的输入匹配采用外部金丝键合线匹配,有效降低了低噪声放大器单片的噪声系数。限幅器采用混合集成工艺制成,能够耐受较大功率。利用微波仿真软件,设计制作了兰格(Lange)电桥、限幅电路和低噪声放大器输入匹配等电路。最终产品尺寸仅为22 mm×16 mm×6 mm,在2.7~3.5 GHz内增益27~28 d B,噪声系数小于1.3 d B,驻波比小于1.3,该平衡限幅MMIC低噪声放大器可承受功率超过200 W、占空比为15%的脉冲功率冲击。Combined with the advantages of hybrid microwave integrated circuits( HMIC) and Ga As monolithic microwave integrated circuit( MMIC),a miniaturization balanced S-band limiter MMIC low noise amplifier( LNA) with high power was designed and manufactured. The limiting power capacity and reliability of this MMIC LNA were improved for its balanced structure. The gold wires,of which the equivalent inductor has higer Q value,were used in the input matching network of MMIC LNA and the noise factor was observably reduced. The HMIC limiter was implemented in mix- integrated process and could work well at high power conditions. The Lange coupler,limiter circuit and input matching circuit were designed using microwave EDA software. The finished equipment of balanced limiter MMIC LNA,with a size of 22 mm × 16 mm × 6 mm,a gain of 27- 28 d B between 2. 7 GHz and 3. 5 GHz,a noise figure of less than 1. 3 d B,and a standing-wave ratio of less than 1. 3,can suffer a pulse with over200 W power and 15% duty ratio.
关 键 词:砷化镓单片集成电路 低噪声放大器 混合微波集成限幅器 外部匹配 平衡式结构 大功率
分 类 号:TN722.3[电子电信—电路与系统]
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