硅基恒流二极管研究现状及展望  

Research Status and Prospects of the Silicon-Based Current Regulative Diode

作　　者：赵圣哲 马万里 赵文魁 

机构地区：[1]深圳方正微电子有限公司,广东深圳518116

出　　处：《半导体技术》2015年第10期764-769,共6页Semiconductor Technology

摘　　要：主要综述了硅基恒流二极管(CRD)国内外的发展历史和研究现状,并以横向沟道CRD为例,详述了器件的工作原理和关键参数,并分析了影响器件性能的主要因素。同时重点研究了目前国内市场上CRD的主流制作方法,包括横向沟道结构和垂直沟道结构(注入形成p+区,沟槽填充多晶以及MOS结构等)。对不同器件结构的优缺点进行了比较分析,认为垂直沟道CRD在器件集成度和恒定电流调整等方面具有一定的优势。简要介绍了CRD在LED驱动中的应用。展望了CRD的未来发展前景。The development history and research status of silicon-based current regulative diode（ CRD） domestic and overseas are summarized. And take the lateral channel CRD for example,the working principle and key parameters of the device are described in detail,and the main factors which influence the device performance are analyzed. At the same time,the mainstream production methods of the CRD in the domestic market are mainly studied,including the lateral channel structure and vertical channel structure（ p＋formed by implantation,trench filled by poly-silicon and MOS structure）. And the advantages and disadvantages of different device structures are compared and analyzed,considering that the vertical channel CRD has a considerable advantage in integration and current regulation. The application of the CRD in LED driver is brief introduced. Finally,the prospects on the future development of the CRD devices are given.

关 键 词：恒流二极管(CRD) 横向沟道 垂直沟道 沟槽结构 恒流源 

分 类 号：TN313[电子电信—物理电子学]