Ambipolar organic heterojunction transistors based on F_(16)CuPc/CuPc with a MoO_3 buffer layer  

作　　者：仪明东 张宁 解令海 黄维 

机构地区：[1]Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials(IAM),Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM),Nanjing University of Posts & Telecommunications [2]Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM),Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM),Nanjing Tech University(Nanjing Tech)

出　　处：《Journal of Semiconductors》2015年第10期49-54,共6页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61475074,61204095)

摘　　要：We fabricated heterojunction organic field-effect transistors （OFETs） using copper phthalocyanine （CuPc） and hexadecafluorophtholocyaninatocopper （F16CuPc） as hole transport layer and electron transport layer, respectively. Compared with F 16 CuPc based OFETs, the electron field-effect mobility in the heterojunction OFETs increased from 3.1 × 10-3 to 8.7 ×10-3 cm2/（V.s）, but the p-type behavior was not observed. To enhanced the hole injection, we modified the source-lrain electrodes using the MoO3 buffer layer, and the hole injection can be effectively improved. Eventually, the ambipolar transport characteristics of the CuPc/F16CuPc based OFETs with a MoO3 buffer layer were achieved, and the field-effect mobilities of electron and hole were 2.5 × 10-3 and 3.1 × 10-3 cm2/（V.s）, respectively.We fabricated heterojunction organic field-effect transistors （OFETs） using copper phthalocyanine （CuPc） and hexadecafluorophtholocyaninatocopper （F16CuPc） as hole transport layer and electron transport layer, respectively. Compared with F 16 CuPc based OFETs, the electron field-effect mobility in the heterojunction OFETs increased from 3.1 × 10-3 to 8.7 ×10-3 cm2/（V.s）, but the p-type behavior was not observed. To enhanced the hole injection, we modified the source-lrain electrodes using the MoO3 buffer layer, and the hole injection can be effectively improved. Eventually, the ambipolar transport characteristics of the CuPc/F16CuPc based OFETs with a MoO3 buffer layer were achieved, and the field-effect mobilities of electron and hole were 2.5 × 10-3 and 3.1 × 10-3 cm2/（V.s）, respectively.

关 键 词：organic field-effect transistors HETEROJUNCTION AMBIPOLAR contact resistance 

分 类 号：TN386[电子电信—物理电子学]