Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO(001) films  

作　　者：胡泊 何为 叶军 汤进 张永圣 Syed Sheraz Ahmad 张向群 成昭华 

机构地区：[1]State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2015年第7期34-39,共6页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant Nos.2015CB921403,2011CB921801,and 2012CB933102);the National Natural Science Foundation of China(Grant Nos.51427801,11374350,and 11274361)

摘　　要：Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO（001） films is investigated by magnetoresistance measurements. When the temperature decreases from 300K to 80K, the measured three-jump hysteresis loops turn into two-jump loops. The temperature dependence of the fourfold in-plane magnetic anisotropy constant K1, domain wall pinning energy, and an additional uniaxial magnetic anisotropy constant KUare responsible for this transformation. The strengths of K1 and domain wall pinning energy increase with decreasing temperature, but KU remains unchanged. Moreover, magnetization reversal mechanisms, with either two successive or two separate 90°domain wall propagation, are introduced to explain the multi-jump magnetic switching process in epitaxial Fe/MgO（001） films at different temperatures.Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO（001） films is investigated by magnetoresistance measurements. When the temperature decreases from 300K to 80K, the measured three-jump hysteresis loops turn into two-jump loops. The temperature dependence of the fourfold in-plane magnetic anisotropy constant K1, domain wall pinning energy, and an additional uniaxial magnetic anisotropy constant KUare responsible for this transformation. The strengths of K1 and domain wall pinning energy increase with decreasing temperature, but KU remains unchanged. Moreover, magnetization reversal mechanisms, with either two successive or two separate 90°domain wall propagation, are introduced to explain the multi-jump magnetic switching process in epitaxial Fe/MgO（001） films at different temperatures.

关 键 词：multi-jump magnetic switching process MAGNETORESISTANCE domain wall 

分 类 号：O484[理学—固体物理]