High performance trench MOS barrier Schottky diode with high-k gate oxide  

作　　者：翟东媛 朱俊 赵毅 蔡银飞 施毅 郑有炓 

机构地区：[1]Department of Information Science and Electronic Engineering,Zhejiang University [2]School of Electronic Science and Engineering,Nanjing University [3]State Key Laboratory of Silicon Materials,Zhejiang University [4]Hangzhou QP Chip Technology Co.Ltd

出　　处：《Chinese Physics B》2015年第7期426-428,共3页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant No.2011CBA00607);the National Natural Science Foundation of China(Grant Nos.61106089 and 61376097);the Zhejiang Provincial Natural Science Foundation of China(Grant No.LR14F040001)

摘　　要：A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.

关 键 词：trench MOS barrier Schottky diode high-k gate oxide leakage current 

分 类 号：TN311.7[电子电信—物理电子学] TN386.1