Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride  

作　　者：魏江镔 池晓伟 陆超 王尘 林光杨 吴焕达 黄巍 李成 陈松岩 刘春莉 

机构地区：[1]Department of Physics,Semiconductor Photonics Research Center,Xiamen University [2]Department of Physics,Hankuk University of Foreign Studies

出　　处：《Chinese Physics B》2015年第7期459-462,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61176092 and 61474094);the National Basic Research Program of China(Grant Nos.2012CB933503 and 2012CB632103);the National Natural Science Foundation of China–National Research Foundation of Korea Joint Research Project(Grant No.11311140251)

摘　　要：Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN0.38/n-Ge Schottky contact exhibits quasi-Ohmic current–voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN0.38/n-Ge Schottky contact exhibits quasi-Ohmic current–voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.

关 键 词：GERMANIUM Fermi-level pinning Schottky barrier height modulation tungsten nitride 

分 类 号：O441[理学—电磁学]