Efficient Passively Q-Switched Nd:YAG/Cr4+:YAG/LBO Microchip Laser  

作　　者：付圣贵 欧阳雪莹 刘晓娟 

机构地区：[1]School of Science,Shandong University of Technology

出　　处：《Chinese Physics Letters》2015年第10期48-50,共3页中国物理快报（英文版）

基　　金：Supported by the Foundation of Shandong Province under Grant No J13LN28;the National Natural Science Foundation of China under Grant No 11304184

摘　　要：Performance of an LD-end-pumped passively Q-switched Nd： YA G/Cr4＋ ： YA G microchip laser operating at 1123 nm is studied. A maximum average output power of 517row with an optical-to-optical conversion efficiency of 12.6% and a slope efficiency of 25.8% is obtained under a pump power of 4.1 W. A minimum pulse width of 1.1 ns with a pulse repetition rate of 20.2kHz is obtained, and the corresponding pulse energy and peak power are 25.6μJ and 23.3kW, respectively. To our knowledge, the 23.3kW peak power is the highest among 1123nm lasers. Additionally, based on the 1123 nm laser, with LBO as the frequency doubler, a 288-mW green-yellow laser at 561 nm is successfully achieved.Performance of an LD-end-pumped passively Q-switched Nd： YA G/Cr4＋ ： YA G microchip laser operating at 1123 nm is studied. A maximum average output power of 517row with an optical-to-optical conversion efficiency of 12.6% and a slope efficiency of 25.8% is obtained under a pump power of 4.1 W. A minimum pulse width of 1.1 ns with a pulse repetition rate of 20.2kHz is obtained, and the corresponding pulse energy and peak power are 25.6μJ and 23.3kW, respectively. To our knowledge, the 23.3kW peak power is the highest among 1123nm lasers. Additionally, based on the 1123 nm laser, with LBO as the frequency doubler, a 288-mW green-yellow laser at 561 nm is successfully achieved.

关 键 词：YAG/LBO Microchip Laser LBO Efficient Passively Q-Switched Nd:YAG/Cr ND 

分 类 号：TN248[电子电信—物理电子学]