Growth and Characterization of InAs1-xSbx with Different Sb Compositions on GaAs Substrates  

作　　者：孙庆灵 王禄 王文奇 孙令 李美成 王文新 贾海强 周均铭 陈弘 

机构地区：[1]Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 [2]Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 [3]State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of Renewable Energy, North China Electric Power University, Beijing 102206

出　　处：《Chinese Physics Letters》2015年第10期89-92,共4页中国物理快报（英文版）

基　　金：Supported by the Aeronautical Science Foundation of China under Grant No 20132435;the National High-Technology Research and Development Program of China under Grant No 2013AA031903;the National Natural Science Foundation of China under Grant Nos 61106013 and 61275107;the China Postdoctoral Science Foundation under Grant No 2014M560936

摘　　要：InAs1-xSbx with different compositions is grown by molecular beam epitaxy on （100）-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.InAs1-xSbx with different compositions is grown by molecular beam epitaxy on （100）-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.

关 键 词：Growth and Characterization of InAs x)Sb_x with Different Sb Compositions on GaAs Substrates SB 

分 类 号：TN213[电子电信—物理电子学]