Wet Chemical Etching of Antimonide-Based Infrared Materials  

作　　者：郝宏玥 向伟 王国伟 徐应强 任正伟 韩玺 贺振宏 廖永平 魏思航 牛智川 

机构地区：[1]State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 [2]Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026

出　　处：《Chinese Physics Letters》2015年第10期102-105,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2014CB643903,2013CB932904,2012CB932701and 2011CB922201;the National Special Funds for the Development of Major Research Equipment and Instruments under Grant No 2012YQ140005;the National Natural Science Foundation of China under Grant Nos 61274013,U1037602 and 61290303;the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB01010200

摘　　要：The roughness and the crystallographic orientation selectivity of etched antimonide-based infrared materials are examined and are used to optimize the chemical mesa etching process of the InAs/GaSb superlattice photodiode with the goal of reducing the dark current. The etehant used is based on phosphoric acid （H3PO4）, citric acid （C6H8O7） and hydrogen peroxide （H2O2）. The roughness of the mesa sidewalls and etching rates are compared and used to find an optimized etchant, with which we obtain optimized mid-wavelength infrared photodiodes possessing an RoA value of 466 Ω·cm2 and a detectivity of 1.43 ×1011 cm.Hz1/2 W-1. Crystallographic orientation selectivity is seen in InAs etching, and also is seen in the InAs/GaSb superlattice wet chemical etching process.The roughness and the crystallographic orientation selectivity of etched antimonide-based infrared materials are examined and are used to optimize the chemical mesa etching process of the InAs/GaSb superlattice photodiode with the goal of reducing the dark current. The etehant used is based on phosphoric acid （H3PO4）, citric acid （C6H8O7） and hydrogen peroxide （H2O2）. The roughness of the mesa sidewalls and etching rates are compared and used to find an optimized etchant, with which we obtain optimized mid-wavelength infrared photodiodes possessing an RoA value of 466 Ω·cm2 and a detectivity of 1.43 ×1011 cm.Hz1/2 W-1. Crystallographic orientation selectivity is seen in InAs etching, and also is seen in the InAs/GaSb superlattice wet chemical etching process.

分 类 号：TN213[电子电信—物理电子学] TQ171.687[化学工程—玻璃工业]