OTP存储器位线负载对读出速度的影响  

Influences of Large Capacitances Upon Read-Out Speed in OTP Memory

作　　者：吴欣昱 张金旻[1] 罗玉香[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《微电子学》2015年第5期649-651,656,共4页Microelectronics

基　　金：电子薄膜与集成器件国家重点实验室创新基金资助项目(CXJJ200905)

摘　　要：在OTP存储器设计中,随着存储器容量的不断加大,位线负载也相应变大,可能导致读机制失效。为了防止发生读机制失效,需增加灵敏放大器充电时间,但是延长充电时间会影响读取速度。在分析OTP存储器灵敏放大器工作原理的基础上,重点研究了位线负载对读出速度的影响。通过仿真,优化了OTP存储器的读出电路参数。With the increasing memory capacity and the keeping doubled-chip area, the bit line load becomes larger, so it may result in failure of the reading mechanism in the one-time programmable memories. Increasing the charging time of the sense amplifier can prevent the reading mechanism out of service. However it will affect the reading speed greatly. The influences of the large capacitance upon read-out speed was analyzed. Two reading mechanisms of different number of the bit line loads were simulated, and the reasonable number of bit lines unit was determined ultimately.

关 键 词：一次性可编程存储器 位线 灵敏放大器 位线负载 

分 类 号：TN432[电子电信—微电子学与固体电子学] TP333[自动化与计算机技术—计算机系统结构]