低温共沉淀法合成GeTe微晶  

Synthesis of GeTe Microcrystal Bia Low Temperature Coprecipitation

作　　者：丁宗财 周健[1] 

机构地区：[1]厦门大学材料学院,福建厦门361005

出　　处：《热加工工艺》2015年第20期70-73,共4页Hot Working Technology

摘　　要：以Ge O2和Te O2为原料,通过低温共沉淀法制备出了结晶性良好、形貌均匀的Ge Te微晶。讨论了Na BH4:(Ge O2+Te O2)摩尔比、Ge O2:Te O2摩尔比和热处理温度等对Ge Te合成的影响。运用X射线衍射、差示扫描量热分析、扫描电镜和能谱分析等手段,对Ge Te微晶的结构、形貌、组成以及其形成机理进行了分析。研究表明,在Na BH4:(Ge O2+Te O2)摩尔比为7:1、Ge O2:Te O2摩尔比为2:1时可获得Ge:Te化学计量比为1:1的前驱体,该前驱体经350℃热处理30min后可得到Ge Te微晶。Ge Te microcrystals were prepared by using low temperature coprecipitation with Ge O2 and Te O2 as the raw material. The effect of Na BH4：（Ge O2＋Te O2） and Ge O2：Te O2 as well as the thermal treatment temperature on the Ge Te synthetic were systematically investigated. The reaction mechanisms, composition crystal structure and morphologies for Ge Te microcrystals were studied by DSC, XRD, SEM and EDS. The results show that the precursor with the toichiometry Ge：Te equals to 1：1 can be obtained in the solution with the following conditions： Na BH4：（Ge O2＋Te O2）=7：1 and Ge O2：Te O2=2：1.Furthermore, the Ge Te micro-crystals can be obtained by annealing the precursor at 350℃ for 30 min.

关 键 词：共沉淀法 碲化锗 热处理 

分 类 号：TB34[一般工业技术—材料科学与工程]