势垒高度对GaAs/Al_xGa_(1-x)As QWIP光谱特性的影响（英文）  

Effect of barrier height on spectral characteristics of GaAs/Al_xGa_(1-x)As QWIP

作　　者：胡小英[1] 刘卫国[1] 段存丽[1] 蔡长龙[1] 牛小玲[1] 

机构地区：[1]西安工业大学光电工程学院陕西省光电功能材料与器件重点实验室,陕西西安710032

出　　处：《红外与激光工程》2015年第10期2995-2999,共5页Infrared and Laser Engineering

基　　金：兵器预研基金项目(62201070821);总装光电专用(40405030104);陕西省重点实验室开放基金(ZSKJ201301);西安工业大学校长开放基金(XAGDXJJ1401);重点院长基金(13GDYJZ01)

摘　　要：为了确定束缚态到准束缚态工作模式QWIP响应波长与势垒高度关系,采用金属有机物化学气相沉积法生长制备势垒高度不同Ga As/AlxGa1-xAs QWIP样品,采用傅里叶光谱仪对样品进行77 K液氮温度光谱测试。结果显示1#,2#样品峰值响应波长与据薛定谔方程得到峰值波长误差为15.6%,4.6%。结果表明:引起量子阱中子带间距离逐渐扩大与峰值响应波长蓝移的根本原因是势垒高度的增加。高分辨透射扫描电镜实验结果表明量子阱材料生长过程精度控制不够及Al Ga As与Ga As晶格不匹配是造成1#样品误差较大的主要原因。说明调节势垒高度可实现QWIP峰值波长微调的目的。A comprehensive analysis on the relationship between the barrier height and the peak wavelength of bound-to-quasi-continuum Quantum Well Infrared Photodetector （QWIP） was demonstrated, together with its effect on characterization of microstructure and macroscopic optic properties of the device-sample. The GaAs/AlxGal_xAs infrared quantum well material was produced via the method of Metal Organic Chemical Vapor Deposition（MOVCD）. Two sample devices with different A1 content（0.23 and 0.32） was designed respectively and their corresponding spectral responses were measured via Fourier Transform Spectrometer at the temperature of 77 K. The experimental results shown that sample 1# and 2# are with the peak wavelengths of 8.36 μm and 7.58 μm, which present obvious difference to the theoretical results based on Schrodinger equation （9.672 μm and 7.928μm, corresponding to errors of 15.6% and 4.6%, respectively）. By analyzing the effect of Al atoms diffusion length, it is found that the decrease of AI content is the key effect which leads to sub-band narrow down and peak wavelength red shift. Meanwhile, by using the method of High Resolution Transmission Electron Microscopy（HRTEM）, it is found that the strong error of sample 1# is mainly due to the crystal lattice mismatch between GaAs and AlGaAs, together with the unsatisfied precise control during the growth of quantum well material. Above analysis demonstrates that adjusting the AI content of barrier height is an effective method to turn the peak wavelength of QWIP.

关 键 词：量子阱红外探测器 高分辨透射扫描电镜 Ga As/AlxGa1-xAs 峰值波长 

分 类 号：TN215[电子电信—物理电子学]