a-SiN_xO_y薄膜局域态激子发光  

Luminescent Localized State Excitons of the a-SiN_xO_y Film

作　　者：张辰朔 郝惠莲[1] 许俊发 万梓扬 

机构地区：[1]上海工程技术大学材料工程学院,上海201600

出　　处：《微纳电子技术》2015年第10期624-628,共5页Micronanoelectronic Technology

基　　金：2014国家级大学生创新训练项目(cs1305009);上海高校青年教师培养资助计划项目(ZZGJD13023);上海工程技术大学博士启动基金资助项目(201308)

摘　　要：利用等离子体增强化学气相沉积方法在单晶硅衬底上制备出非晶氮氧化硅(a-SiNxOy)薄膜。基于结构表证、光致发光(PL)光谱、温度依赖性PL光谱和光致激发(PLE)光谱,对aSiNxOy薄膜中局域态激子的发光性能进行了详细的研究。傅里叶红外吸收光谱(FTIR)和X射线光电子能谱(XPS)实验结果证实了a-SiNxOy薄膜中存在O—Si—N键合结构;PLE和PL峰位之间存在0.92 eV的斯托克斯漂移,表明a-SiNxOy薄膜室温可见发光主要起源于局域态激子的辐射复合;实验和理论计算结果表明,a-SiNxOy薄膜室温PL主要起源于与Si—O—Si和O—Si—N相关的局域态激子的辐射复合。The amorphous silicon oxynitride（a-SiNxOy）film was prepared on the mono-crystalline silicon substrate by the plasma enhanced chemical vapor deposition method.On the basis of the structural characterization,photoluminescence（PL）,temperature-dependent PL and PL excitation（PLE）spectra,the luminescence properties of localized state excitons of the a-SiNxOy films were investigated in detail.The experimental results of the Fourier transform infrared spectroscopy（FTIR）and X-ray photoelectron spectroscopy（XPS）show that the O—Si—N bonding configuration exists in the a-SiNxOyfilm.The 0.92 eV Stokes shift between the PLE and PL peaks indicates that the room temperature visible luminescence of the a-SiNxOyfilm is mainly associated with the radiative recombination of localized excitons.The experimental and theoretical results show that the room temperature PL of the a-SiNxOyfilm mainly originates from the localized exciton radiative recombination related to the Si—O—Si and O—Si—N bonding configurations.

关 键 词：非晶氮氧化硅薄膜 光致发光(PL) 局域态激子 键合结构 辐射复合 

分 类 号：TN304.8[电子电信—物理电子学] O482.31[理学—固体物理]