助溶剂法生长Bi_4Ti_3O_(12)单晶的形貌和缺陷研究  

Research on the Defects and Morphology of Bi_4Ti_3O_(12) Single Crystal Grown by Flux Method

作　　者：李华兵[1] 叶万能[2] 宿杰[1] 卢朝靖[2] 

机构地区：[1]青岛大学物理科学学院,青岛266071 [2]青岛大学纤维新材料与现代纺织国家重点实验室培育基地,青岛266071

出　　处：《青岛大学学报（自然科学版）》2015年第3期40-43,共4页Journal of Qingdao University(Natural Science Edition)

摘　　要：采用助溶剂缓慢降温自发成核法生长钛酸铋Bi4Ti3O12(BIT)单晶,晶体呈淡黄色,尺寸达到40mm×20mm×0.4mm。BIT单晶(001)面生长速度最慢,其(001)面成为热力学上稳定存在的自然显露晶面。在光学显微镜下观察到BIT晶体中出现的两种缺陷:包裹体和枝晶,对其形成的机制进行分析并提出了减少和消除缺陷的相应措施。用光学显微镜对BIT单晶的90°电畴结构进行了较好的观察和分析。Bi4Ti3O12single crystal was grown by the slow cooling self-flux method using Bi2O3 as a flux,crystals showed color of light yellow and maximum size of 40 mm ×20mm ×0.4mm.The slowest growth rate face（001）was the free exposing places with thermodynamics stability.The defects such as inclusion and dendrite in the BIT single crystal were investigated by optical microscope.The forming mechanism of these defects were analyzed and some measures were proposed to eliminate the defects.90°domain structure of BIT was also investigated by optical microscope.

关 键 词：BIT单晶 助溶剂法 生长形貌 缺陷 电畴结构 

分 类 号：O771[理学—晶体学]