Photoluminescence and surface photovoltage properties of Zn Se nanoribbons  

作　　者：Chao Fan Qinglin Zhang Xiaoli Zhu Xiujuan Zhuang Anlian Pan 

机构地区：[1]Key Laboratory for Micro Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science,Hunan University

出　　处：《Science Bulletin》2015年第19期1674-1679,共6页科学通报（英文版）

基　　金：supported by the National Natural Science Foundation of China(11374092,61474040,11204073);the National Basic Research Program of China(2012CB933703);the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province and the Hunan Provincial Science and Technology Department(2014FJ2001,2014GK3015,2014TT1004)

摘　　要：ZnSe nanoribbons were synthesized with chemical vapor deposition route. The excitation power-dependent photol and surface photovoltage （SPV） techniques were used to study the optoelectronic properties of the as-grown ZnSe nanoribbons. Three deep defect （DD）-related emission bands, respectively, centered at 623 nm （DD1）, 563 nm （DD2） and 525 nm （DD3）, emerge orderly with increasing the excitation power, which is attributed to the saturation of the DD states from deeper to shallower level. The SPV spectrum and the corresponding phase spectrum show that DD1 mainly acts as recombination center, while DD2 and DD3 can act as both the recombination center and electron traps. The influence of the trapping electrons on the SPV response dynamic was studied with transient SPV.Zn Se nanoribbons were synthesized with chemical vapor deposition route. The excitation power-dependent photoluminescence and surface photovoltage(SPV) techniques were used to study the optoelectronic properties of the as-grown Zn Se nanoribbons. Three deep defect(DD)-related emission bands, respectively, centered at 623 nm(DD1), 563 nm(DD2)and 525 nm(DD3), emerge orderly with increasing the excitation power, which is attributed to the saturation of the DD states from deeper to shallower level. The SPV spectrum and the corresponding phase spectrum show that DD1 mainly acts as recombination center, while DD2 and DD3 can act as both the recombination center and electron traps. The influence of the trapping electrons on the SPV response dynamic was studied with transient SPV.

关 键 词：ZNSE NANORIBBON PHOTOLUMINESCENCE Surface photovoltage Deep defect 

分 类 号：TB383.1[一般工业技术—材料科学与工程]