中密度C/C复合材料表面制备SiCnw/SiC涂层  

Preparation of SiCnw/SiC coating on mid-density C/C composites

作　　者：凌继容[1] 谭周建[1] 李军 褚胜林[1] 李丙菊 刘学文 廖寄乔[1,2] 

机构地区：[1]中南大学粉末冶金国家重点实验室,长沙410083 [2]湖南金博复合材料科技有限公司,益阳413000

出　　处：《粉末冶金材料科学与工程》2015年第5期725-731,共7页Materials Science and Engineering of Powder Metallurgy

基　　金：国家高技术研究发展计划资助项目(863计划2012AA03A207);国家自然科学基金委员会创新研究群体科学基金资助项目(51021063)

摘　　要：在中密度C/C复合材料基体上采用催化化学气相沉积方法生长碳化硅纳米线(SiCnw)及制备碳化硅纳米线/碳化硅(SiCnw/SiC)涂层,研究中密度C/C复合材料基体上加载催化剂后涂层沉积及其抗氧化性能,结果表明:中密度基体上催化制备SiCnw涂层,可改善沉积效率,同时可抑制裂纹扩展,明显改善SiC涂层在1200℃的氧化防护能力。另外,在1500℃的空气中氧化10h后,SiCnw/SiC涂层氧化质量损失率仅为1.34%,明显低于质量损失率为8.67%的单层SiC涂层。The SiCnw/SiC （Silicon Carbide Nanowires/Silicon Carbide） coating was deposited on the surface of mid-density carbon/carbon composites （C/C composites） by chemical vapor deposition. The coating deposition and its anti-oxidant properties were studied for the C/C composites of mid-density with catalyst （Cat.）. The results show that during preparing SiCnw layer in mid-density matrix by Cat,, the deposition efficiency is improved, meanwhile, the growth of crack is also restrained. Therefore, the oxidation resistant of SiC coating with SiCnw layer is improved in the air at 1 200 ℃. Since the mass loss of SiCnw/SiC coating is 1.34%, which is lower than that of SiC coating （8.67%） after oxidation for 10 h at 1 500 ℃ in air.

关 键 词：碳化硅纳米晶须 C/C复合材料 SiCw/SiC涂层 化学气相沉积(CVD) 

分 类 号：TB332[一般工业技术—材料科学与工程]